| Vgs (th) (max) 'Id: | 4V @ 4mA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-247AD (IXFH) |
| Série: | HiPerFET™ |
| RDS On (Max) @ Id, Vgs: | 33 mOhm @ 30A, 10V |
| Ztráta energie (Max): | 300W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-247-3 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 5200pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 155nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Drain na zdroj napětí (Vdss): | 200V |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 60A (Tc) |
IXFH60N65X2
MOSFET N-CH 650V 60A TO-247
IXFH60N25Q
MOSFET N-CH 250V 60A TO-247AD
IXFH60N60X
MOSFET N-CH 600V 60A TO247
IXFH60N50P3
MOSFET N-CH 500V 60A TO247
IXFH5N100
IXFH58N20
MOSFET N-CH 200V 58A TO-247AD
IXFH58N20Q
MOSFET N-CH 200V 58A TO-247AD
IXFH5N100P
IXFH60N60
IXFH5N100A
VHF125-16IO7
RECT BRIDGE HALF 1600V PWS-E1
EMH61T2R
TRANS 2NPN PREBIAS 0.15W EMT6
BD435S
TRANS NPN 32V 4A TO-126
SBC847AWT1G
TRANS NPN 45V 0.1A SOT-323
BC53-10PASX
IC TRANS PNP 1A 80V SOT1061
PTFB212503FLV2R250XTMA1
IC AMP RF LDMOS
2N7002K-T1-GE3
MOSFET N-CH 60V 300MA SOT-23
ATS-16D-49-C1-R0
HEATSINK 30X30X10MM L-TAB
ATS-18A-177-C3-R0
HEATSINK 35X35X20MM R-TAB T412
ATS-20B-124-C3-R0
HEATSINK 50X50X25MM XCUT T412
