| Vgs (th) (max) 'Id: | 3.9V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | D2PAK |
| Série: | HEXFET®, StrongIRFET™ |
| RDS On (Max) @ Id, Vgs: | 1.2 mOhm @ 100A, 10V |
| Ztráta energie (Max): | 375W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 14240pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 460nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Drain na zdroj napětí (Vdss): | 40V |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 195A (Tc) |
IRFSL5620PBF
MOSFET N-CH 200V 24A TO262
IRFSL7530PBF
MOSFET N-CH 60V 195A D2PAK
IRFSL7434PBF
MOSFET N-CH 40V 195A TO262
IRFSL59N10D
MOSFET N-CH 100V 59A TO-262
IRFSL7437PBF
MOSFET N CH 40V 195A TO-262
IRFSL4710
IRFSL7440PBF
MOSFET N CH 40V 120A TO-262
IRFSL4710PBF
MOSFET N-CH 100V 75A TO-262
IRFSL5615PBF
MOSFET N-CH 150V 33A TO-262
IRFSL7437TRLPBF
MOSFET N-CH 40V 195A TO-262
VS-T90RIA120
SCR PHASE CONT 1200V 90A D-55
BD244B-S
TRANS PNP 80V 6A
FDBL0150N80
MOSFET N-CH 80V 300A
FQB8N60CTM_WS
MOSFET N-CH 600V 7.5A
MIO-3260CZ22GS8A1E
INTEL CELERON N2930 PICO-ITX S
ATS-15D-43-C1-R0
HEATSINK 25X25X10MM L-TAB
ATS-07E-91-C1-R0
HEATSINK 40X40X10MM R-TAB
ATS-15H-93-C1-R0
HEATSINK 40X40X20MM R-TAB
ATS-14E-19-C1-R0
HEATSINK 54X54X20MM XCUT
ATS-10E-94-C3-R0
HEATSINK 40X40X25MM R-TAB T412
