| Vgs (th) (max) 'Id: | 2.35V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | DIRECTFET™ ST |
| Série: | HEXFET® |
| RDS On (Max) @ Id, Vgs: | 8.1 mOhm @ 15A, 10V |
| Ztráta energie (Max): | 2.1W (Ta), 42W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | DirectFET™ Isometric ST |
| Provozní teplota: | -40°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 1300pF @ 15V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 4.5V, 10V |
| Drain na zdroj napětí (Vdss): | 30V |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 14A (Ta), 55A (Tc) |
IRF6617TR1
MOSFET N-CH 30V 14A DIRECTFET
IRF6618TR1
MOSFET N-CH 30V 30A DIRECTFET
IRF6618TR1PBF
MOSFET N-CH 30V 30A DIRECTFET
IRF6616TRPBF
MOSFET N-CH 40V 19A DIRECTFET
IRF6617
IRF6617TR
IRF6617TR1PBF
MOSFET N-CH 30V 14A DIRECTFET
IRF6618
MOSFET N-CH 30V 30A DIRECTFET
IRF6618TR
IRF6617TRPBF.
T2500DG
TRIAC 400V 6A TO220AB
UNR31A6G0L
TRANS PREBIAS PNP 100MW SSSMINI3
IPP180N10N3GXKSA1
MOSFET N-CH 100V 43A TO220-3
CSD17306Q5A
MOSFET N-CH 30V 100A 8SON
FQD7P20TF
MOSFET P-CH 200V 5.7A DPAK
904-27-2-28-2-B-0
HEAT SINK PIN FIN 27X27MM CLIP
ATS-05F-74-C1-R0
HEATSINK 25X25X15MM R-TAB
ATS-14H-142-C3-R0
HEATSINK 30X30X15MM L-TAB T412
ATS-07B-78-C1-R0
HEATSINK 25X25X35MM R-TAB
ATS-21A-51-C2-R0
HEATSINK 30X30X20MM L-TAB T766
